PART |
Description |
Maker |
HMC170C8 |
GaAs MMIC SMT DOUBLEBALANCED MIXER, 2.5 - 4 GHz
|
Hittite Microwave Corporation
|
HMC218MS8-06 |
GaAs MMIC SMT DOUBLEBALANCED MIXER, 4.5 - 6 GHz
|
Hittite Microwave Corpo...
|
HMC147S801 HMC147S8 |
GaAs MMIC SMT DOUBLEBALANCED MIXER, 1.6 - 3.4 GHz
|
Hittite Microwave Corporation
|
HMC220MS806 |
GaAs MMIC SMT DOUBLEBALANCED MIXER, 5 - 12 GHz
|
Hittite Microwave Corporation
|
HMC218MS8E HMC218MS8-08 |
GaAs MMIC SMT DOUBLEBALANCED BALANCED MIXER, 4.5 - 6 GHz
|
Hittite Microwave Corporation Hittite Microwave Corpo...
|
316MS8E |
GaAs MMIC HIGH IP3 DOUBLEBALANCED MIXER, 1.5 - 3.8 GHz
|
美国讯泰微波有限公司上海代表
|
HMC351S8 |
600000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN GaAs MMIC HIGH IP3 DOUBLEBALANCED MIXER, 0.7 - 1.2 GHz
|
美国讯泰微波有限公司上海代表 Hittite Microwave Corporation
|
SFH420 SFH425 Q62702-P0330 Q62702-P1690 |
Mica Film Capacitor; Capacitance:33pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:300V GaAs-IR-Lumineszenzdiode 0.5 in SMT-Gehuse GaAs Infrared Emitter in SMT Package GaAs-IR-Lumineszenzdiode in SMT-Gehause GaAs Infrared Emitter in SMT Package From old datasheet system
|
Siemens Semiconductor G... SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
434E |
SMT GaAs HBT MMIC DIVIDE-BY-8, DC - 8.0 GHz
|
美国讯泰微波有限公司上海代表
|